Broadband Baseband Impedance Control for Linearity Enhancement in Microwave Devices

The out-of-band impedance environment is considered to be of paramount importance in engineering the in-band impedance environment. Presenting the frequency independent and constant outof-band impedances across the wide modulation bandwidth is extremely important for reliable device characterization for future wireless systems. This paper presents an out-of-band impedance optimization scheme based on simultaneous engineering of significant baseband components IF1 (twice the modulation frequency) and IF2 (four times the modulation frequency) and higher baseband components such as IF3 (six times the modulation frequency) and IF4 (eight times the modulation frequency) to engineer the in-band impedance environment. The investigations were carried out on a 10W GaN HEMT device driven to deliver a peak envelope power of approximately 40.5dBm under modulated excitation. The presentation of frequency independent baseband impedances to all the significant baseband components whilst maintaining the optimum termination for fundamental tones as well as reactive termination for 2nd harmonic under class-J mode of operation has outlined separate optimum impedances for best intermodulation (IM) linearity. Keywords—Active load-pull, baseband, device characterisation, waveform measurements.